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AP28G45EM
Advanced Power Electronics Corp.
High Input Impedance High Pick Current Capability 3.3V Gate Drive Strobe Flash Applications
C C C C
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
VCE ICP
450V 130A C
G E
G E
SO-8
E E
Absolute Maximum Ratings
Symbol VCE VGE IGEP ICP PD@TC=25 TSTG TJ
1
Parameter Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Gate-Emitter Voltage Pulsed Collector Current, VGE @ 3.3V Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Rating 450 6 8 130 2.5 -55 to 150 -55 to 150
Units V V V A W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol IGES ICES VCE(sat) VGE(th) Qg Qge Qgc td(on) tr td(off) tf Cies Coes Cres RthJA
1
Parameter Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Test Conditions VGE= 6V, VCE=0V
VGE=3.3V, ICP=130A (Pulsed)
Min. -
Typ. 3.8 74 8 34 20 100 400 3 3020 220 50 -
Max. 10 10 6 1 120 4830 50
Units uA uA V V nC nC nC ns ns ns s pF pF pF /W
Collector-Emitter Leakage Current VCE=450V, VGE=0V Gate Threshold Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE=VGE, IC=250uA IC=40A VCE=360V VGE=4.5V VCC=200V IC=15A RG=10 VGE=5V VGE=0V VCE=25V f=1.0MHz
Thermal Resistance Junction-Ambient
Notes:
1.Surface mounted on 1 in2 copper pad of FR4 board ; 125/W when mounted on Min. copper pad. Data and specifications subject to change without notice
201117031
AP28G45EM
240 140
200
T A =25 C
o
5.0V 4.0V IC , Collector Current (A)
120
T A = 150 C
o
5.0V 4.0V 3.3 V
IC , Collector Current (A)
100
160
3.3V
120
80
60
2.0V
80
2.0V
40
40
V G =1.0V
20
V G =1.0V
0
0
0
2
4
6
8
10
12
0
1
2
3
4
5
6
7
V CE , Collector-Emitter Voltage (V)
V CE , Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
240
9
200
V CE =6.0V 25 C
o
V GE =4.0V VCE(sat) ,Saturation Voltage(V)
7
IC , Collector Current(A)
160
70 o C 125 o C T A =150 o C
I C =130A
I C =120A
5
120
I C =100A
80
3
I C =50A
40
0
1
0
1
2
3
4
5
6
0
20
40
60
80
100
120
140
160
V GE , Gate-Emitter Voltage (V)
Junction Temperature ( C)
o
Fig 3. Collector Current v.s. Gate-Emitter Voltage
1.2
Fig 4. Collector- Emitter Saturation Voltage v.s. Junction Temperature
10
VGE(th) ,Gate Threshold Voltage (V)
1.0
VCE ,Collector-Emitter Voltage(V)
o T A =25 C
8
0.8
6
I C = 130 A 120A 100A 50A
0.6
4
0.4
2
0.2
0.0 -50 0 50 100 150
0 0 1 2 3 4 5 6
Junction Temperature ( o C )
V GE , Gate-Emitter Voltage(V)
Fig 5. Gate Threshold Voltage
v.s. Junction Temperature
Fig 6. Collector Current v.s. Gate-Emitter Voltage
AP28G45EM
f=1.0MHz
10000 160
T A =25 C ICP , Peak Collector Current (A) Cies
1000 120
o
C (pF)
80
Coes
100
Cres
40
10 1 5 9 13 17 21 25 29
0
0 2 4 6 8
V CE , Collector-Emitter Voltage (V))
V GE , Gate-to-Emitter Voltage (V)
Fig 7. Typical Capacitance Characterisitics
Fig 8. Maximum Pulse Collector Current
VCE
RC
TO THE OSCILLOSCOPE
90%
C VCE RG G VCC=200 V
E
+
10% VGE
VGE
-
5V
td(on) tr
td(off) tf
Fig 9. Switching Time Test Circuit
Fig 10. Switching Time Waveform
12
TO THE C G OSCILLOSCOPE
VGE , Gate -Emitter Voltage (V)
VCE
10
I CP =40A V CE =360V
8
VCC=360V VGE
+
6
E
4
1~3mA
-
IG
IC
2
0 0 40 80 120 160 200
Q G , Gate Charge (nC)
Fig 11. Gate Charge Test Circuit
Fig 12. Gate Charge Waveform

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